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| 10 -5V -4V 8 -10V -3.5V -3V 10 Vds=-5V 8 25C -Id (A) Vgs=-2.5V 4 -2V -1.5V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 250 -Id (A) 6 6 125C 4 2 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=-2.5V Normalized On-Resistance Vgs=-10V 1.4 Vgs=-4.5V 200 Rds(on) (m:) Vgs=-2.5V 1.2 Id=-2A 1 150 Vgs=-4.5V Vgs=-10V 100 50 0 1 2 3 4 5 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 300 250 Id=-1A 1.0E+01 1.0E+00 1.0E-01 125C 125C Rds(on) (m:) 200 150 100 50 0 0 2 4 6 8 25C -Is (A) 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -Vsd (Volts) Figure 6: Body-Diode Characteristics 600 5 4 Vds=-15V Id=-1A 500 Ciss Capacitance (pF) -Vgs (Volts) 400 300 200 Coss 100 Crss 3 2 1 0 0 1 2 3 4 5 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max)=150C Ta=25C Rds(on) limited 100Ps 10ms 0.1s 1s 10s DC 1ms 20 Tj(max)=150C Ta=25C 10Ps Power (W) 15 10.0 -Id (Amps) 1.0 10 0.1 5 0.0 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=200C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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